View SB29003_1053980.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SB29003 High Voltage Transistor
SB29003
High Voltage Transistor
1
SOT-223 3.Emitter
Marking: 5463003
1.Base
2.Collector
Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Ta = 25C unless otherwise noted
Parameter
Value
500 400 6 300 2 150 -55 ~ 150
Units
V V V mA W C C
Collector Dissipation (TC = 25C) Junction Temperature Storage Temperature
TC = 25C unless otherwise noted
Electrical Characteristics
Symbol
BVCBO BVCER BVEBO ICBO ICES IEBO hFE
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain *
Conditions
IC = 100A, IB = 0 IC = 1mA, IB = 0 IE = 100A, IC = 0 VCB = 400V, IE = 0 VCE = 400V, IB = 0 VEB = 4V, IC = 0 VCE = 10V, IC = 1mA VCE = 10V, IC = 10mA VCE = 10V, IC = 50mA VCE = 10V, IC = 100mA IC = 1mA, IB = 0.1mA IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA IC = 10mA, IB = 1mA VCB = 20V, IE = 0, f = 1MHz
Min.
500 400 6
Max
Units
V V V A A A
0.1 0.5 0.1 40 50 45 40 200
VCE(sat)
Collector-Emitter Saturation Voltage *
0.4 0.5 0.75 0.75 7
V V V V pF
VBE(sat) Cob
Base-Emitter Saturation Voltage * Output Capatitance
* Pulse Test: PW 300s, Duty Cycle 2%
(c)2004 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
SB29003 Rev. A
SB29003 High Voltage Transistor
Typical Performance Characteristics
Figure 1. DC Current Gain
160
Figure 2. Capacitance
1000
VCE=10V
140 120
Ta=25 C f=1MHz
o
100 80 60 40 20 0 -20 -40 1 10 100 1000 10000
Cib[pF],Cob[pF], CAPACITANCE
hFE, DC CURRENT GAIN
100
Cib
10
Cob
1 0.1
1
10
100
1000
IC[mA], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. On Voltage
1.0
Figure 4. Collector Saturation Region
0.5
VCE[V] COLLECTOR EMITTER VOLTAGE
Ta=25 C
0.8
o
IC=1mA
0.4
IC=10mA
IC=50mA
Ta=25 c
o
VBE(sat) @IC/IB=10
[V], VOLTAGE
0.6
0.3
VBE(on) @VCE=10V
0.4
0.2
0.2
VCE(sat)@IC/IB=10
0.1
0.0 0.1
1
10
100
1000
0.0 10
100
1000
10000
100000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 5. High Frequency Current Gain
100
hFE, SMALL SIGNAL CURRENT GAIN
VCE=10V f=10MHz o Ta=25 C
10
1
0.1 0.1
1
10
100
1000
IC[mA], COLLECTOR CURRENT
2 SB29003 Rev. A
www.fairchildsemi.com
SB29003 High Voltage Transistor
Mechanical Dimensions
SOT-223
0.08MAX
3.00 0.10
MAX1.80
1.75 0.20
3.50 0.20
(0.60)
0.65 0.20
+0.04
0.06 -0.02
2.30 TYP (0.95) 4.60 0.25
0.70 0.10 (0.95)
+0.10 0.25 -0.05
(0.60)
0~
10
1.60 0.20
(0.46)
(0.89)
6.50 0.20
3 SB29003 Rev. A
7.00 0.30
Dimensions in Millimeters
www.fairchildsemi.com
SB29003 High Voltage Transistor
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM
ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM
Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM
Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM
StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I14
4 SB29003 Rev. A
www.fairchildsemi.com

▲Up To Search▲

Price & Availability of SB29003

	To Download SB29003 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .